IR2111SPBF

Obsolete

INFINEON

THE IR2111S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHOOT THROUGH PROTECTION (8 LEAD SOIC PACKAGE)

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IR2111SPBF

Obsolete

INFINEON

THE IR2111S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHOOT THROUGH PROTECTION (8 LEAD SOIC PACKAGE)

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2111 Series

The IR2111SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2111SPBF

Channel Type	Synchronous
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	12.6 V
Logic Voltage - VIL	8.3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2111 Series

Part	Gate Type	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Driven Configuration	Fall Time (Typ)	Rise Time (Typ)	High Side Voltage - Max (Bootstrap)	Logic Voltage - VIL	Logic Voltage - VIH	Channel Type	Mounting Type	Gate Channel	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Operating Temperature (Min)	Operating Temperature (Max)	Input Type	Package Length	Package Name	Package Width
INFINEON IR2111S	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2111STRPBF	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2111	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Through Hole	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm
INFINEON IR2111SPBF	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2111STR	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

IR2111SPBF | Datasheet