Specification	IR2111STR

Channel Type	Synchronous
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	12.6 V
Logic Voltage - VIL	8.3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2111 Series

Part	Gate Type	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Driven Configuration	Fall Time (Typ)	Rise Time (Typ)	High Side Voltage - Max (Bootstrap)	Logic Voltage - VIL	Logic Voltage - VIH	Channel Type	Mounting Type	Gate Channel	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Operating Temperature (Min)	Operating Temperature (Max)	Input Type	Package Length	Package Name	Package Width
INFINEON IR2111S	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2111STRPBF	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2111	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Through Hole	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm
INFINEON IR2111SPBF	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm
INFINEON IR2111STR	IGBT MOSFET N-Channel MOSFET	2	500 mA	250 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	N-Channel	10 VDC	20 V	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm

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