IR2111 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Gate Type | Number of Drivers | Current - Peak Output (Sink) | Current - Peak Output (Source) | Driven Configuration | Fall Time (Typ) | Rise Time (Typ) | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL | Logic Voltage - VIH | Channel Type | Mounting Type | Gate Channel | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Operating Temperature (Min) | Operating Temperature (Max) | Input Type | Package Length | Package Name | Package Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET N-Channel MOSFET | 2 | 500 mA | 250 mA | Half-Bridge | 40 ns | 80 ns | 600 V | 8.3 V | 12.6 V | Synchronous | Surface Mount | N-Channel | 10 VDC | 20 V | -40 °C | 150 °C | Non-Inverting | 0.154 in | 8-SOIC | 3.9 mm |
INFINEON | IGBT MOSFET N-Channel MOSFET | 2 | 500 mA | 250 mA | Half-Bridge | 40 ns | 80 ns | 600 V | 8.3 V | 12.6 V | Synchronous | Surface Mount | N-Channel | 10 VDC | 20 V | -40 °C | 150 °C | Non-Inverting | 0.154 in | 8-SOIC | 3.9 mm |
INFINEON | IGBT MOSFET N-Channel MOSFET | 2 | 500 mA | 250 mA | Half-Bridge | 40 ns | 80 ns | 600 V | 8.3 V | 12.6 V | Synchronous | Through Hole | N-Channel | 10 VDC | 20 V | -40 °C | 150 °C | Non-Inverting | 0.3 in | 8-DIP 8-PDIP | 7.62 mm |
INFINEON | IGBT MOSFET N-Channel MOSFET | 2 | 500 mA | 250 mA | Half-Bridge | 40 ns | 80 ns | 600 V | 8.3 V | 12.6 V | Synchronous | Surface Mount | N-Channel | 10 VDC | 20 V | -40 °C | 150 °C | Non-Inverting | 0.154 in | 8-SOIC | 3.9 mm |
INFINEON | IGBT MOSFET N-Channel MOSFET | 2 | 500 mA | 250 mA | Half-Bridge | 40 ns | 80 ns | 600 V | 8.3 V | 12.6 V | Synchronous | Surface Mount | N-Channel | 10 VDC | 20 V | -40 °C | 150 °C | Non-Inverting | 0.154 in | 8-SOIC | 3.9 mm |