PMPB20EN,115

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Nexperia USA Inc.

MOSFET N-CH 30V 7.2A DFN2020MD-6

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PMPB20EN,115

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Nexperia USA Inc.

MOSFET N-CH 30V 7.2A DFN2020MD-6

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMPB20 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB20EN,115

Current - Continuous Drain (Id) (Ta)	7.2 A, 7.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	10.8 nC
Input Capacitance (Ciss) (Max)	435 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UDFN Exposed Pad
Package Name	DFN2020MD-6
Power Dissipation (Max)	12.5 W, 1.7 W
Rds On (Max)	19.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

PMPB20 Series

20 V, single P-channel Trench MOSFET

Part	Rds On (Max)	Vgs (Max)	Package Name	Input Capacitance (Ciss) (Max)	Package / Case	Power Dissipation (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Mounting Type	Technology	Grade	Qualification
Nexperia USA Inc. PMPB20XPE,115	23.5 mOhm	12 V	DFN2020MD-6	2945 pF	6-UDFN Exposed Pad	1.7 W 12.5 W	P-Channel	-55 °C	150 °C	20 V	45 nC	7.2 A 7.2 A	4.5 V	1.8 V	900 mV	Surface Mount	MOSFET (Metal Oxide)
Nexperia USA Inc. PMPB20EN,115	19.5 mOhm	20 V	DFN2020MD-6	435 pF	6-UDFN Exposed Pad	1.7 W 12.5 W	N-Channel	-55 °C	150 °C	30 V	10.8 nC	7.2 A 7.2 A	10 V	4.5 V	2 V	Surface Mount	MOSFET (Metal Oxide)
Nexperia USA Inc. PMPB20XPEAX	23.5 mOhm	12 V	DFN2020MD-6	2945 pF	6-UDFN Exposed Pad	1.7 W 12.5 W	P-Channel	-55 °C	150 °C	20 V	45 nC	7.2 A 7.2 A	4.5 V	1.8 V	1 V	Surface Mount	MOSFET (Metal Oxide)	Automotive	AEC-Q101
Nexperia USA Inc. PMPB20XNEAX	20 mOhm	12 V	DFN2020MD-6	930 pF	6-UDFN Exposed Pad	12.5 W 460 mW	N-Channel	-55 °C	150 °C	20 V	15 nC	7.5 A	4.5 V	2.5 V	1.25 V	Surface Mount	MOSFET (Metal Oxide)	Automotive	AEC-Q101
Nexperia USA Inc. PMPB20XNEAZ	20 mOhm	12 V	DFN2020MD-6	930 pF	6-UDFN Exposed Pad	12.5 W 460 mW	N-Channel	-55 °C	150 °C	20 V	15 nC	7.5 A	4.5 V	2.5 V	1.25 V	Surface Mount	MOSFET (Metal Oxide)	Automotive	AEC-Q101