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PMPB20XPE,115

PMPB20XPE,115

Active
Nexperia USA Inc.

20 V, SINGLE P-CHANNEL TRENCH MOSFET

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PMPB20XPE,115

PMPB20XPE,115

Active
Nexperia USA Inc.

20 V, SINGLE P-CHANNEL TRENCH MOSFET

Find alt

Description

General part information

PMPB20 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationPMPB20XPE,115
Current - Continuous Drain (Id) (Ta)7.2 A, 7.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)45 nC
Input Capacitance (Ciss) (Max)2945 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-UDFN Exposed Pad
Package NameDFN2020MD-6
Power Dissipation (Max)12.5 W, 1.7 W
Rds On (Max)23.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)900 mV

Pricing

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CAD

3D models and CAD resources for this part