
PMPB20XPE,115
ActiveNexperia USA Inc.
20 V, SINGLE P-CHANNEL TRENCH MOSFET

PMPB20XPE,115
ActiveNexperia USA Inc.
20 V, SINGLE P-CHANNEL TRENCH MOSFET
Description
General part information
PMPB20 Series
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PMPB20XPE,115 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 7.2 A, 7.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 45 nC |
| Input Capacitance (Ciss) (Max) | 2945 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Package Name | DFN2020MD-6 |
| Power Dissipation (Max) | 12.5 W, 1.7 W |
| Rds On (Max) | 23.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 900 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Thermal performance of DFN packages
Power MOSFET frequently asked questions and answers
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