20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
| Part | Rds On (Max) | Vgs (Max) | Package Name | Input Capacitance (Ciss) (Max) | Package / Case | Power Dissipation (Max) | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Mounting Type | Technology | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 23.5 mOhm | 12 V | DFN2020MD-6 | 2945 pF | 6-UDFN Exposed Pad | 1.7 W 12.5 W | P-Channel | -55 °C | 150 °C | 20 V | 45 nC | 7.2 A 7.2 A | 4.5 V | 1.8 V | 900 mV | Surface Mount | MOSFET (Metal Oxide) | ||
Nexperia USA Inc. | 19.5 mOhm | 20 V | DFN2020MD-6 | 435 pF | 6-UDFN Exposed Pad | 1.7 W 12.5 W | N-Channel | -55 °C | 150 °C | 30 V | 10.8 nC | 7.2 A 7.2 A | 10 V | 4.5 V | 2 V | Surface Mount | MOSFET (Metal Oxide) | ||
Nexperia USA Inc. | 23.5 mOhm | 12 V | DFN2020MD-6 | 2945 pF | 6-UDFN Exposed Pad | 1.7 W 12.5 W | P-Channel | -55 °C | 150 °C | 20 V | 45 nC | 7.2 A 7.2 A | 4.5 V | 1.8 V | 1 V | Surface Mount | MOSFET (Metal Oxide) | Automotive | AEC-Q101 |
 Nexperia USA Inc. | 20 mOhm | 12 V | DFN2020MD-6 | 930 pF | 6-UDFN Exposed Pad | 12.5 W 460 mW | N-Channel | -55 °C | 150 °C | 20 V | 15 nC | 7.5 A | 4.5 V | 2.5 V | 1.25 V | Surface Mount | MOSFET (Metal Oxide) | Automotive | AEC-Q101 |
Nexperia USA Inc. | 20 mOhm | 12 V | DFN2020MD-6 | 930 pF | 6-UDFN Exposed Pad | 12.5 W 460 mW | N-Channel | -55 °C | 150 °C | 20 V | 15 nC | 7.5 A | 4.5 V | 2.5 V | 1.25 V | Surface Mount | MOSFET (Metal Oxide) | Automotive | AEC-Q101 |