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IR2110SPBF

IR2110SPBF

NRND
INFINEON

THE IR2110S IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (16 LEAD SOIC PACKAGE)

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IR2110SPBF

IR2110SPBF

NRND
INFINEON

THE IR2110S IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (16 LEAD SOIC PACKAGE)

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Description

General part information

IR2110 Series

The IR2110SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.

Technical Specifications

Parameters and characteristics for this part

SpecificationIR2110SPBF
Channel TypeIndependent
Current - Peak Output (Sink)2 A
Current - Peak Output (Source)2 A
Driven ConfigurationHalf-Bridge
Fall Time (Typ)17 ns
Gate ChannelN-Channel
Gate TypeIGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)500 V
Input TypeNon-Inverting
Logic Voltage - VIH9.5 V
Logic Voltage - VIL6 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package Length0.295 in
Package Name16-SOIC
Package Width7.5 mm
Rise Time (Typ)25 ns
Voltage - Supply (Maximum)20 V
Voltage - Supply (Minimum)3.3 V

Pricing

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CAD

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Documents

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