Description
General part information
IR2110 Series
The IR2110SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
Technical Specifications
Parameters and characteristics for this part
| Specification | IR2110SPBF |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 2 A |
| Current - Peak Output (Source) | 2 A |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 17 ns |
| Gate Channel | N-Channel |
| Gate Type | IGBT, MOSFET, N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) | 500 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 9.5 V |
| Logic Voltage - VIL | 6 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.295 in |
| Package Name | 16-SOIC |
| Package Width | 7.5 mm |
| Rise Time (Typ) | 25 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 3.3 V |
Pricing
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CAD
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