IR2110 Series
Manufacturer: INFINEON
THE IR2110S IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (16 LEAD SOIC PACKAGE)
| Part | Input Type | Driven Configuration | Operating Temperature (Min) | Operating Temperature (Max) | Number of Drivers | Current - Peak Output (Sink) | Current - Peak Output (Source) | Logic Voltage - VIH | Logic Voltage - VIL | Channel Type | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Package Name | High Side Voltage - Max (Bootstrap) | Rise Time (Typ) | Fall Time (Typ) | Mounting Type | Gate Channel | Gate Type | Package Length | Package Width | Package Leads | Package Features |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | Non-Inverting | Half-Bridge | -40 °C | 150 °C | 2 | 2 A | 2 A | 9.5 V | 6 V | Independent | 20 V | 3.3 V | 16-SOIC | 500 V | 25 ns | 17 ns | Surface Mount | N-Channel | IGBT MOSFET N-Channel MOSFET | 0.295 in | 7.5 mm | ||
INFINEON | Non-Inverting | Half-Bridge | -40 °C | 150 °C | 2 | 2 A | 2 A | 9.5 V | 6 V | Independent | 20 V | 3.3 V | 14-DIP | 500 V | 25 ns | 17 ns | Through Hole | N-Channel | IGBT MOSFET N-Channel MOSFET | 0.3 in | 7.62 mm | ||
INFINEON | Non-Inverting | Half-Bridge | -40 °C | 150 °C | 2 | 2 A | 2 A | 9.5 V | 6 V | Independent | 20 V | 3.3 V | 16-DIP (0.300" 7.62mm) 16-PDIP | 500 V | 25 ns | 17 ns | Through Hole | N-Channel | IGBT MOSFET N-Channel MOSFET | 14 Leads | |||
INFINEON | Non-Inverting | Half-Bridge | -40 °C | 150 °C | 2 | 2 A | 2 A | 9.5 V | 6 V | Independent | 20 V | 3.3 V | 14-DIP 14-PDIP | 500 V | 25 ns | 17 ns | Through Hole | N-Channel | IGBT MOSFET N-Channel MOSFET | 0.3 in | 7.62 mm | 13 Leads | |
INFINEON | Non-Inverting | Half-Bridge | -40 °C | 150 °C | 2 | 2 A | 2 A | 9.5 V | 6 V | Independent | 20 V | 3.3 V | 16-SOIC | 500 V | 25 ns | 17 ns | Surface Mount | N-Channel | IGBT MOSFET N-Channel MOSFET | 0.295 in | 7.5 mm | ||
INFINEON | Non-Inverting | Half-Bridge | -40 °C | 150 °C | 2 | 2 A | 2 A | 9.5 V | 6 V | Independent | 20 V | 3.3 V | 16-SOIC | 500 V | 25 ns | 17 ns | Surface Mount | N-Channel | IGBT MOSFET N-Channel MOSFET | 0.295 in | 7.5 mm | ||
INFINEON | Non-Inverting | Half-Bridge | -40 °C | 150 °C | 2 | 2 A | 2 A | 9.5 V | 6 V | Independent | 20 V | 3.3 V | 14-DIP | 500 V | 25 ns | 17 ns | Through Hole | N-Channel | IGBT MOSFET N-Channel MOSFET | 0.3 in | 7.62 mm | ||
INFINEON | Non-Inverting | Half-Bridge | -40 °C | 150 °C | 2 | 2 A | 2 A | 9.5 V | 6 V | Independent | 20 V | 3.3 V | 16-SOIC | 500 V | 25 ns | 17 ns | Surface Mount | N-Channel | IGBT MOSFET N-Channel MOSFET | 0.295 in | 7.5 mm | ||
INFINEON | Non-Inverting | Half-Bridge | -40 °C | 150 °C | 2 | 2 A | 2 A | 9.5 V | 6 V | Independent | 20 V | 3.3 V | 16-DIP (0.300" 7.62mm) 16-PDIP | 500 V | 25 ns | 17 ns | Through Hole | N-Channel | IGBT MOSFET N-Channel MOSFET | 14 Leads |