Infineon Technologies AG-IR2113PBF Gate and Power Drivers Driver 2-OUT High Side/Low Side Non-Inv 14-Pin PDIP Tube

IR2110PBF

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INFINEON

THE IR2110 IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (14 LEAD PDIP PACKAGE)

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IR2110PBF

NRND

INFINEON

THE IR2110 IS A 500 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (14 LEAD PDIP PACKAGE)

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2110 Series

EiceDRIVER™ 500 Vhigh and low-sidegate driver ICwith typical 2.5 A source and 2.5 A sink currents in 14 Lead PDIP package forIGBTsandMOSFETs. Also available in16 Lead SOIC WB.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2110PBF

Channel Type	Independent
Current - Peak Output (Sink)	2 A
Current - Peak Output (Source)	2 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	17 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	500 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	14-DIP
Package Width	7.62 mm
Rise Time (Typ)	25 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	3.3 V

IR2110 Series

Part	Input Type	Driven Configuration	Operating Temperature (Min)	Operating Temperature (Max)	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Logic Voltage - VIH	Logic Voltage - VIL	Channel Type	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Package Name	High Side Voltage - Max (Bootstrap)	Rise Time (Typ)	Fall Time (Typ)	Mounting Type	Gate Channel	Gate Type	Package Length	Package Width	Package Leads	Package Features
INFINEON IR2110SPBF	Non-Inverting	Half-Bridge	-40 °C	150 °C	2	2 A	2 A	9.5 V	6 V	Independent	20 V	3.3 V	16-SOIC	500 V	25 ns	17 ns	Surface Mount	N-Channel	IGBT MOSFET N-Channel MOSFET	0.295 in	7.5 mm
INFINEON IR2110PBF	Non-Inverting	Half-Bridge	-40 °C	150 °C	2	2 A	2 A	9.5 V	6 V	Independent	20 V	3.3 V	14-DIP	500 V	25 ns	17 ns	Through Hole	N-Channel	IGBT MOSFET N-Channel MOSFET	0.3 in	7.62 mm
INFINEON IR2110-2PBF	Non-Inverting	Half-Bridge	-40 °C	150 °C	2	2 A	2 A	9.5 V	6 V	Independent	20 V	3.3 V	16-DIP (0.300" 7.62mm) 16-PDIP	500 V	25 ns	17 ns	Through Hole	N-Channel	IGBT MOSFET N-Channel MOSFET			14 Leads
INFINEON IR2110-1PBF	Non-Inverting	Half-Bridge	-40 °C	150 °C	2	2 A	2 A	9.5 V	6 V	Independent	20 V	3.3 V	14-DIP 14-PDIP	500 V	25 ns	17 ns	Through Hole	N-Channel	IGBT MOSFET N-Channel MOSFET	0.3 in	7.62 mm		13 Leads
INFINEON IR2110STR	Non-Inverting	Half-Bridge	-40 °C	150 °C	2	2 A	2 A	9.5 V	6 V	Independent	20 V	3.3 V	16-SOIC	500 V	25 ns	17 ns	Surface Mount	N-Channel	IGBT MOSFET N-Channel MOSFET	0.295 in	7.5 mm
INFINEON IR2110S	Non-Inverting	Half-Bridge	-40 °C	150 °C	2	2 A	2 A	9.5 V	6 V	Independent	20 V	3.3 V	16-SOIC	500 V	25 ns	17 ns	Surface Mount	N-Channel	IGBT MOSFET N-Channel MOSFET	0.295 in	7.5 mm
INFINEON IR2110	Non-Inverting	Half-Bridge	-40 °C	150 °C	2	2 A	2 A	9.5 V	6 V	Independent	20 V	3.3 V	14-DIP	500 V	25 ns	17 ns	Through Hole	N-Channel	IGBT MOSFET N-Channel MOSFET	0.3 in	7.62 mm
INFINEON IR2110STRPBF	Non-Inverting	Half-Bridge	-40 °C	150 °C	2	2 A	2 A	9.5 V	6 V	Independent	20 V	3.3 V	16-SOIC	500 V	25 ns	17 ns	Surface Mount	N-Channel	IGBT MOSFET N-Channel MOSFET	0.295 in	7.5 mm
INFINEON IR2110-2	Non-Inverting	Half-Bridge	-40 °C	150 °C	2	2 A	2 A	9.5 V	6 V	Independent	20 V	3.3 V	16-DIP (0.300" 7.62mm) 16-PDIP	500 V	25 ns	17 ns	Through Hole	N-Channel	IGBT MOSFET N-Channel MOSFET			14 Leads

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet