DMP2010UFV-7

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Diodes Inc

MOSFET BVDSS: 8V~24V POWERDI3333-8 T&R 2K

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DMP2010UFV-7

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Diodes Inc

MOSFET BVDSS: 8V~24V POWERDI3333-8 T&R 2K

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DocumentsDatasheet Recommended Soldering Techniques

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Technical Specifications

Parameters and characteristics for this part

Specification	DMP2010UFV-7

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC
Input Capacitance (Ciss) (Max) @ Vds	3350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.2 V

DMP2010UFG Series

20V P-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
Diodes Inc DMP2010UFV-7	10 V	3350 pF	103 nC	9.5 mOhm	POWERDI3333-8	50 A	1.2 V	-55 °C	150 °C	Surface Mount	8-PowerVDFN	P-Channel	MOSFET (Metal Oxide)	20 V	2.5 V 4.5 V	2 W
Diodes Inc DMP2010UFG-7	10 V	3350 pF	103 nC	9.5 mOhm	POWERDI3333-8	12.7 A 42 A	1.2 V	-55 °C	150 °C	Surface Mount	8-PowerVDFN	P-Channel	MOSFET (Metal Oxide)	20 V	2.5 V 4.5 V	900 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.60
		10	$ 0.51
		100	$ 0.36
		500	$ 0.28
		1000	$ 0.23
	Digi-Reel®	1	$ 0.60
		10	$ 0.51
		100	$ 0.36
		500	$ 0.28
		1000	$ 0.23
	Tape & Reel (TR)	2000	$ 0.20
		6000	$ 0.19
		10000	$ 0.18
		50000	$ 0.17

Description

General part information

DMP2010UFG Series

This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.