DMP2010UFG Series

20V P-Channel Enhancement Mode MOSFET

Catalog

20V P-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
Diodes Inc DMP2010UFV-7	10 V	3350 pF	103 nC	9.5 mOhm	POWERDI3333-8	50 A	1.2 V	-55 °C	150 °C	Surface Mount	8-PowerVDFN	P-Channel	MOSFET (Metal Oxide)	20 V	2.5 V 4.5 V	2 W
Diodes Inc DMP2010UFG-7	10 V	3350 pF	103 nC	9.5 mOhm	POWERDI3333-8	12.7 A 42 A	1.2 V	-55 °C	150 °C	Surface Mount	8-PowerVDFN	P-Channel	MOSFET (Metal Oxide)	20 V	2.5 V 4.5 V	900 mW

Catalog

20V P-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON)– Ensures On State Losses Are Minimized

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product

Description

This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.