DMP2010UFG-7
ActiveDiodes Inc
MOSFET BVDSS: 8V~24V POWERDI3333-8 T&R 2K
DMP2010UFG-7
ActiveDiodes Inc
MOSFET BVDSS: 8V~24V POWERDI3333-8 T&R 2K
Description
General part information
DMP2010UFG-7
This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP2010UFG-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 12.7 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 103 nC |
| Input Capacitance (Ciss) (Max) | 3350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | POWERDI3333-8 |
| Power Dissipation (Max) | 900 mW |
| Rds On (Max) | 9.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) | 1.2 V |
Pricing
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CAD
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Documents
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