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IPD70R600P7SAUMA1

IPD70R600P7SAUMA1

Active
INFINEON

POWER MOSFET, N CHANNEL, 700 V, 8.5 A, 0.49 OHM, TO-252 (DPAK), SURFACE MOUNT

IPD70R600P7SAUMA1

IPD70R600P7SAUMA1

Active
INFINEON

POWER MOSFET, N CHANNEL, 700 V, 8.5 A, 0.49 OHM, TO-252 (DPAK), SURFACE MOUNT

Description

General part information

IPD70 Series

700V CoolMOS™ P7 power transistor a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and recommended for Flyback topologies for example used in chargers, adapters, lighting applications, etc.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD70R600P7SAUMA1
Current - Continuous Drain (Id) (Tc)8.5 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)10.5 nC
Input Capacitance (Ciss) (Max)364 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)43 W
Rds On (Max)600 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)3.5 V

Pricing

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