Zenode.ai Logo
IPD70R1K4CEAUMA1

IPD70R1K4CEAUMA1

Obsolete
INFINEON

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; DPAK TO-252 PACKAGE; 1400 MOHM; PRICE/PERFORMANCE

IPD70R1K4CEAUMA1

IPD70R1K4CEAUMA1

Obsolete
INFINEON

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; DPAK TO-252 PACKAGE; 1400 MOHM; PRICE/PERFORMANCE

Description

General part information

IPD70 Series

CoolMOS™ CEis a technology platform of Infineon´s market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers600V, 650V and 700Vdevices targeting low power chargers for mobile devices and power tools,LCD,LED TVandLED lightingapplications.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD70R1K4CEAUMA1
Current - Continuous Drain (Id) (Tc)5.4 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)10.5 nC
Input Capacitance (Ciss) (Max)225 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)53 W
Rds On (Max)1.4 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources