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Infineon Technologies AG-IPD70R600P7SAUMA1 MOSFETs Trans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R

IPD70R900P7SAUMA1

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INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 700 V ; DPAK TO-252 PACKAGE; 900 MOHM; PRICE/PERFORMANCE

Infineon Technologies AG-IPD70R600P7SAUMA1 MOSFETs Trans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R

IPD70R900P7SAUMA1

Active
INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 700 V ; DPAK TO-252 PACKAGE; 900 MOHM; PRICE/PERFORMANCE

Description

General part information

IPD70 Series

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new700V CoolMOS™ P7superjunction MOSFET series addresses the low power SMPS market, such as mobile phonechargersor notebookadaptersby offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD70R900P7SAUMA1
Current - Continuous Drain (Id) (Tc)6 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)6.8 nC
Input Capacitance (Ciss) (Max)211 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)30.5 W
Rds On (Max)900 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)3.5 V

Pricing

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