CSD25484F4T

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Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 109 MOHM, GATE ESD PROTECTION

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CSD25484F4T

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Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 109 MOHM, GATE ESD PROTECTION

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Description Specifications Series Pricing CAD Documents

Description

General part information

CSD25484F4 Series

This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Technical Specifications

Parameters and characteristics for this part

Specification	CSD25484F4T

Current - Continuous Drain (Id) (Ta)	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	8 V
FET Type	P-Channel
Gate Charge (Max)	1.42 nC
Input Capacitance (Ciss) (Max)	230 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	3-XFLGA, 3-XFDFN
Package Name	3-PICOSTAR
Power Dissipation (Max)	500 mW
Rds On (Max)	94 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-12 V
Vgs(th) (Max)	1.2 V

CSD25484F4 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection

Part	Package / Case	Current - Continuous Drain (Id) (Ta)	Package Name	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Technology	Drain to Source Voltage (Vdss)	Mounting Type	FET Type
Texas Instruments CSD25484F4T	3-XFDFN 3-XFLGA	2.5 A	3-PICOSTAR	500 mW	8 V	1.8 V	-12 V	94 mOhm	230 pF	1.2 V	-55 °C	150 °C	1.42 nC	MOSFET (Metal Oxide)	20 V	Surface Mount	P-Channel