CSD25484F4 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection

Part	Package / Case	Current - Continuous Drain (Id) (Ta)	Package Name	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Technology	Drain to Source Voltage (Vdss)	Mounting Type	FET Type
Texas Instruments CSD25484F4T	3-XFDFN 3-XFLGA	2.5 A	3-PICOSTAR	500 mW	8 V	1.8 V	-12 V	94 mOhm	230 pF	1.2 V	-55 °C	150 °C	1.42 nC	MOSFET (Metal Oxide)	20 V	Surface Mount	P-Channel

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection

Description

This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . . This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . .