Specification	CSD19536KTT

Current - Continuous Drain (Id) (Ta)	200 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	153 nC
Input Capacitance (Ciss) (Max)	12000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB, D2PAK (3 Leads + Tab), TO-263AA, TO-263-4
Package Name	TO-263 (DDPAK-3)
Power Dissipation (Max)	375 W
Rds On (Max)	2.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.2 V

CSD19536 Series

100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm

Part	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Rds On (Max)	Package Name	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Gate Charge (Max)	Package / Case	Mounting Type
Texas Instruments CSD19536KCS	N-Channel	-55 °C	175 °C	MOSFET (Metal Oxide)	150 A	100 V	6 V	10 V	2.7 mOhm	TO-220-3	20 V	375 W	12000 pF	3.2 V	153 nC	TO-220-3	Through Hole
Texas Instruments CSD19536KTTT	N-Channel	-55 °C	175 °C	MOSFET (Metal Oxide)	200 A	100 V	6 V	10 V	2.4 mOhm	TO-263 (DDPAK-3)	20 V	375 W	12000 pF	3.2 V	153 nC	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	Surface Mount
Texas Instruments CSD19536KTT	N-Channel	-55 °C	175 °C	MOSFET (Metal Oxide)	200 A	100 V	6 V	10 V	2.4 mOhm	TO-263 (DDPAK-3)	20 V	375 W	12000 pF	3.2 V	153 nC	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	Surface Mount