CSD19536 Series

100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm

Part	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Rds On (Max)	Package Name	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Gate Charge (Max)	Package / Case	Mounting Type
Texas Instruments CSD19536KCS	N-Channel	-55 °C	175 °C	MOSFET (Metal Oxide)	150 A	100 V	6 V	10 V	2.7 mOhm	TO-220-3	20 V	375 W	12000 pF	3.2 V	153 nC	TO-220-3	Through Hole
Texas Instruments CSD19536KTTT	N-Channel	-55 °C	175 °C	MOSFET (Metal Oxide)	200 A	100 V	6 V	10 V	2.4 mOhm	TO-263 (DDPAK-3)	20 V	375 W	12000 pF	3.2 V	153 nC	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	Surface Mount
Texas Instruments CSD19536KTT	N-Channel	-55 °C	175 °C	MOSFET (Metal Oxide)	200 A	100 V	6 V	10 V	2.4 mOhm	TO-263 (DDPAK-3)	20 V	375 W	12000 pF	3.2 V	153 nC	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	Surface Mount

Catalog

100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm

Description

This 100-V, 2-mΩ, D2PAK (TO-263) NexFET power MOSFET is designed to minimize losses in power conversion applications. This 100-V, 2-mΩ, D2PAK (TO-263) NexFET power MOSFET is designed to minimize losses in power conversion applications.