Specification	TSM170N06CP ROG

Current - Continuous Drain (Id) (Tc)	38 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	28.5 nC
Input Capacitance (Ciss) (Max)	900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252 (DPAK)
Power Dissipation (Max)	46 W
Rds On (Max)	17 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

TSM170 Series

Part	Gate Charge (Max)	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Technology	Package / Case	Vgs (Max)	Power Dissipation (Max)	Package Name	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	FET Type	Package Length	Package Width
Taiwan Semiconductor Corporation TSM170N06CH C5G	28.5 nC	Through Hole	17 mOhm	-55 °C	150 °C	2.5 V	900 pF	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251-3 Stub Leads TO-251AA	20 V	46 W	TO-251 (IPAK) TO-251S (IPAK SL)	60 V	10 V	4.5 V	38 A	N-Channel
Taiwan Semiconductor Corporation TSM170N06CP ROG	28.5 nC	Surface Mount	17 mOhm	-55 °C	150 °C	2.5 V	900 pF	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	46 W	TO-252 (DPAK)	60 V	10 V	4.5 V	38 A	N-Channel
Taiwan Semiconductor Corporation TSM170N06CH	15 nC	Through Hole	17 mOhm	-55 °C	150 °C	2.5 V	900 pF	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	20 V	46 W	TO-251 (IPAK)	60 V	10 V	4.5 V	38 A	N-Channel
Taiwan Semiconductor Corporation TSM170N06PQ56 RLG	29 nC	Surface Mount	17 mOhm	-55 °C	150 °C	2.5 V	1556 pF	MOSFET (Metal Oxide)	8-PowerTDFN	20 V	73.5 W	8-PDFN	60 V	10 V	4.5 V	44 A	N-Channel	5 mm	6 mm

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