TSM170N06PQ56 RLG

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 44A 8PDFN

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 44A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM170N06PQ56 RLG

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1556 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	73.5 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Technology
Taiwan Semiconductor Corporation TSM170N06CH	60 V	-55 °C	150 °C	15 nC	900 pF	46 W	4.5 V 10 V	N-Channel	20 V	38 A	TO-251 (IPAK)	IPAK TO-251-3 Short Leads TO-251AA	2.5 V	Through Hole	17 mOhm	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM170N06PQ56 RLG	60 V	-55 °C	150 °C	29 nC	1556 pF	73.5 W	4.5 V 10 V	N-Channel	20 V	44 A	8-PDFN (5x6)	8-PowerTDFN	2.5 V	Surface Mount	17 mOhm	MOSFET (Metal Oxide)

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General part information

N-Channel 60 V 44A (Tc) 73.5W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources