TSM170 Series

Catalog

60V, 38A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Technology
Taiwan Semiconductor Corporation TSM170N06CH	60 V	-55 °C	150 °C	15 nC	900 pF	46 W	4.5 V 10 V	N-Channel	20 V	38 A	TO-251 (IPAK)	IPAK TO-251-3 Short Leads TO-251AA	2.5 V	Through Hole	17 mOhm	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM170N06PQ56 RLG	60 V	-55 °C	150 °C	29 nC	1556 pF	73.5 W	4.5 V 10 V	N-Channel	20 V	44 A	8-PDFN (5x6)	8-PowerTDFN	2.5 V	Surface Mount	17 mOhm	MOSFET (Metal Oxide)