W947D6HKB-5J TR
ActiveWinbond Electronics
IC DRAM 128MBIT PARALLEL 54VFBGA
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W947D6HKB-5J TR
ActiveWinbond Electronics
IC DRAM 128MBIT PARALLEL 54VFBGA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | W947D6HKB-5J TR | W947D6 Series |
---|---|---|
Access Time | - | 5 ns |
Clock Frequency | - | 166 - 200 MHz |
Memory Format | DRAM | DRAM |
Memory Interface | Parallel | LVCMOS, Parallel |
Memory Organization | 8M x 16 | 8M x 16 |
Memory Size | 128 Mb | 128 Mb |
Memory Type | - | Volatile |
Mounting Type | - | Surface Mount |
Operating Temperature | - | 85 °C |
Operating Temperature | - | -40 - -25 °C |
Package / Case | - | 60-TFBGA |
Supplier Device Package | - | 60-VFBGA (8x9) |
Technology | SDRAM - Mobile LPDDR | SDRAM - Mobile LPDDR |
Voltage - Supply | - | 1.95 V |
Voltage - Supply | - | 1.7 V |
Write Cycle Time - Word, Page | - | 15 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
W947D6 Series
IC DRAM 128MBIT LVCMOS 60VFBGA
Part | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Memory Size | Package / Case | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Memory Organization | Technology | Supplier Device Package | Memory Interface | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W947D6HBHX5I | 85 °C | -40 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 200 MHz | 15 ns | 5 ns |
Winbond Electronics W947D6HKB-5J TR | 128 Mb | 8M x 16 | SDRAM - Mobile LPDDR | Parallel | DRAM | |||||||||||
Winbond Electronics W947D6HBHX5I TR | 85 °C | -40 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 200 MHz | 15 ns | 5 ns |
Winbond Electronics W947D6HBHX5E | 85 °C | -25 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 200 MHz | 15 ns | 5 ns |
Winbond Electronics W947D6HBHX5E TR | 85 °C | -25 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 200 MHz | 15 ns | 5 ns |
Winbond Electronics W947D6HKB-5J | 128 Mb | 8M x 16 | SDRAM - Mobile LPDDR | Parallel | DRAM | |||||||||||
Winbond Electronics W947D6HBHX6E | 85 °C | -25 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 166 MHz | 15 ns | 5 ns |
Description
General part information
W947D6 Series
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel
Documents
Technical documentation and resources
No documents available