W947D6HBHX5I TR

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Winbond Electronics

IC DRAM 128MBIT LVCMOS 60VFBGA

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Winbond Electronics

IC DRAM 128MBIT LVCMOS 60VFBGA

Technical Specifications

Parameters and characteristics commom to parts in this series

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

IC DRAM 128MBIT LVCMOS 60VFBGA

Part	Operating Temperature [Max]	Operating Temperature [Min]	Memory Type	Memory Size	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Memory Organization	Technology	Supplier Device Package	Memory Interface	Memory Format	Clock Frequency	Write Cycle Time - Word, Page	Access Time
Winbond Electronics W947D6HBHX5I	85 °C	-40 °C	Volatile	128 Mb	60-TFBGA	1.95 V	1.7 V	Surface Mount	8M x 16	SDRAM - Mobile LPDDR	60-VFBGA (8x9)	LVCMOS	DRAM	200 MHz	15 ns	5 ns
Winbond Electronics W947D6HKB-5J TR				128 Mb					8M x 16	SDRAM - Mobile LPDDR		Parallel	DRAM
Winbond Electronics W947D6HBHX5I TR	85 °C	-40 °C	Volatile	128 Mb	60-TFBGA	1.95 V	1.7 V	Surface Mount	8M x 16	SDRAM - Mobile LPDDR	60-VFBGA (8x9)	LVCMOS	DRAM	200 MHz	15 ns	5 ns
Winbond Electronics W947D6HBHX5E	85 °C	-25 °C	Volatile	128 Mb	60-TFBGA	1.95 V	1.7 V	Surface Mount	8M x 16	SDRAM - Mobile LPDDR	60-VFBGA (8x9)	LVCMOS	DRAM	200 MHz	15 ns	5 ns
Winbond Electronics W947D6HBHX5E TR	85 °C	-25 °C	Volatile	128 Mb	60-TFBGA	1.95 V	1.7 V	Surface Mount	8M x 16	SDRAM - Mobile LPDDR	60-VFBGA (8x9)	LVCMOS	DRAM	200 MHz	15 ns	5 ns
Winbond Electronics W947D6HKB-5J				128 Mb					8M x 16	SDRAM - Mobile LPDDR		Parallel	DRAM
Winbond Electronics W947D6HBHX6E	85 °C	-25 °C	Volatile	128 Mb	60-TFBGA	1.95 V	1.7 V	Surface Mount	8M x 16	SDRAM - Mobile LPDDR	60-VFBGA (8x9)	LVCMOS	DRAM	166 MHz	15 ns	5 ns

General part information

SDRAM - Mobile LPDDR Memory IC 128Mbit LVCMOS 200 MHz 5 ns 60-VFBGA (8x9)

Technical documentation and resources