IC DRAM 128MBIT LVCMOS 60VFBGA
Part | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Memory Size | Package / Case | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Memory Organization | Technology | Supplier Device Package | Memory Interface | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W947D6HBHX5I | 85 °C | -40 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 200 MHz | 15 ns | 5 ns |
Winbond Electronics W947D6HKB-5J TR | 128 Mb | 8M x 16 | SDRAM - Mobile LPDDR | Parallel | DRAM | |||||||||||
Winbond Electronics W947D6HBHX5I TR | 85 °C | -40 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 200 MHz | 15 ns | 5 ns |
Winbond Electronics W947D6HBHX5E | 85 °C | -25 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 200 MHz | 15 ns | 5 ns |
Winbond Electronics W947D6HBHX5E TR | 85 °C | -25 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 200 MHz | 15 ns | 5 ns |
Winbond Electronics W947D6HKB-5J | 128 Mb | 8M x 16 | SDRAM - Mobile LPDDR | Parallel | DRAM | |||||||||||
Winbond Electronics W947D6HBHX6E | 85 °C | -25 °C | Volatile | 128 Mb | 60-TFBGA | 1.95 V | 1.7 V | Surface Mount | 8M x 16 | SDRAM - Mobile LPDDR | 60-VFBGA (8x9) | LVCMOS | DRAM | 166 MHz | 15 ns | 5 ns |