IPB65R095C7ATMA2

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INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; D2PAK TO-263 PACKAGE; 95 MOHM; HIGHEST PERFORMANCE

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IPB65R095C7ATMA2

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INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; D2PAK TO-263 PACKAGE; 95 MOHM; HIGHEST PERFORMANCE

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Description Specifications Series Pricing CAD Documents

Description

General part information

CoolMOS C7 Series

Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Technical Specifications

Parameters and characteristics for this part

Specification	IPB65R095C7ATMA2

Current - Continuous Drain (Id) (Tc)	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	45 nC
Input Capacitance (Ciss) (Max)	2140 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	128 W
Rds On (Max)	95 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

CoolMOS C7 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Package Name	Power Dissipation (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Max)
INFINEON IPL65R130C7AUMA1	-40 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	15 A	4 V	1670 pF	4-PowerTSFN	650 V	Surface Mount	PG-VSON-4	102 W	130 mOhm	10 V	20 V	35 nC
INFINEON IPA65R190C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	8 A	4 V	1150 pF	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220-FP	30 W	190 mOhm	10 V	20 V	23 nC
INFINEON IPP60R180C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	13 A	4 V	1080 pF	TO-220-3	600 V	Through Hole	PG-TO220-3-1	68 W	180 mOhm	10 V	20 V	24 nC 24 nC
INFINEON IPB65R095C7ATMA2	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	24 A	4 V	2140 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	Surface Mount	PG-TO263-3	128 W	95 mOhm	10 V	20 V	45 nC
INFINEON IPP65R190C7FKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	13 A	4 V	1150 pF	TO-220-3	650 V	Through Hole	PG-TO220-3	72 W	190 mOhm	10 V	20 V	23 nC
INFINEON IPL60R065C7AUMA1	-40 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	29 A	4 V		4-PowerTSFN	600 V	Surface Mount	PG-VSON-4-1	180 W	65 mOhm	10 V	20 V	68 nC
INFINEON IPA65R225C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	7 A	4 V	996 pF	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220-FP	29 W	225 mOhm 225 mOhm	10 V	20 V	20 nC
INFINEON IPA60R060C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	16 A	4 V		TO-220-3 Full Pack	600 V	Through Hole	PG-TO220-FP	34 W	60 mOhm	10 V	20 V	68 nC

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Technical Data Sheet EN

IPB65R095C7ATMA2 | Datasheet