IPL60R065C7AUMA1

Active

INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 8X8 PACKAGE; 65 MOHM; HIGHEST PERFORMANCE

Find alt

Alpha

IPL60R065C7AUMA1

Active

INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 8X8 PACKAGE; 65 MOHM; HIGHEST PERFORMANCE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

CoolMOS C7 Series

The600V CoolMOS™C7 superjunction (SJ) MOSFETseries offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Technical Specifications

Parameters and characteristics for this part

Specification	IPL60R065C7AUMA1

Current - Continuous Drain (Id) (Tc)	29 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	4-PowerTSFN
Package Name	PG-VSON-4-1
Power Dissipation (Max)	180 W
Rds On (Max)	65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

CoolMOS C7 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Package Name	Power Dissipation (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Max)
INFINEON IPL65R130C7AUMA1	-40 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	15 A	4 V	1670 pF	4-PowerTSFN	650 V	Surface Mount	PG-VSON-4	102 W	130 mOhm	10 V	20 V	35 nC
INFINEON IPA65R190C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	8 A	4 V	1150 pF	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220-FP	30 W	190 mOhm	10 V	20 V	23 nC
INFINEON IPP60R180C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	13 A	4 V	1080 pF	TO-220-3	600 V	Through Hole	PG-TO220-3-1	68 W	180 mOhm	10 V	20 V	24 nC 24 nC
INFINEON IPB65R095C7ATMA2	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	24 A	4 V	2140 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	Surface Mount	PG-TO263-3	128 W	95 mOhm	10 V	20 V	45 nC
INFINEON IPP65R190C7FKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	13 A	4 V	1150 pF	TO-220-3	650 V	Through Hole	PG-TO220-3	72 W	190 mOhm	10 V	20 V	23 nC
INFINEON IPL60R065C7AUMA1	-40 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	29 A	4 V		4-PowerTSFN	600 V	Surface Mount	PG-VSON-4-1	180 W	65 mOhm	10 V	20 V	68 nC
INFINEON IPA65R225C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	7 A	4 V	996 pF	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220-FP	29 W	225 mOhm 225 mOhm	10 V	20 V	20 nC
INFINEON IPA60R060C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	16 A	4 V		TO-220-3 Full Pack	600 V	Through Hole	PG-TO220-FP	34 W	60 mOhm	10 V	20 V	68 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IPL60R065C7AUMA1 | Datasheet

Technical Data Sheet EN