CoolMOS C7 Series

Manufacturer: INFINEON

Catalog

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 8X8 PACKAGE; 130 MOHM; HIGHEST PERFORMANCE

Part	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Package Name	Power Dissipation (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Max)
INFINEON IPL65R130C7AUMA1	-40 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	15 A	4 V	1670 pF	4-PowerTSFN	650 V	Surface Mount	PG-VSON-4	102 W	130 mOhm	10 V	20 V	35 nC
INFINEON IPA65R190C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	8 A	4 V	1150 pF	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220-FP	30 W	190 mOhm	10 V	20 V	23 nC
INFINEON IPP60R180C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	13 A	4 V	1080 pF	TO-220-3	600 V	Through Hole	PG-TO220-3-1	68 W	180 mOhm	10 V	20 V	24 nC 24 nC
INFINEON IPB65R095C7ATMA2	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	24 A	4 V	2140 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	Surface Mount	PG-TO263-3	128 W	95 mOhm	10 V	20 V	45 nC
INFINEON IPP65R190C7FKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	13 A	4 V	1150 pF	TO-220-3	650 V	Through Hole	PG-TO220-3	72 W	190 mOhm	10 V	20 V	23 nC
INFINEON IPL60R065C7AUMA1	-40 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	29 A	4 V		4-PowerTSFN	600 V	Surface Mount	PG-VSON-4-1	180 W	65 mOhm	10 V	20 V	68 nC
INFINEON IPA65R225C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	7 A	4 V	996 pF	TO-220-3 Full Pack	650 V	Through Hole	PG-TO220-FP	29 W	225 mOhm 225 mOhm	10 V	20 V	20 nC
INFINEON IPA60R060C7XKSA1	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	16 A	4 V		TO-220-3 Full Pack	600 V	Through Hole	PG-TO220-FP	34 W	60 mOhm	10 V	20 V	68 nC