BSZ0910LSATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 4.5 MOHM;

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DocumentsDatasheet Technical Data Sheet EN

BSZ0910LSATMA1

Active

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 4.5 MOHM;

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ0910LSATMA1

Current - Continuous Drain (Id) @ 25°C	18 A, 40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.1 W, 37 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	PG-TDSON-8 FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSZ0910 Series

Part	Supplier Device Package	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	FET Feature	Power - Max
Infineon Technologies BSZ0910LSATMA1	PG-TDSON-8 FL	20 V	Surface Mount	2.1 W 37 W	18 A 40 A	4.5 V 10 V	1100 pF	8-PowerTDFN	N-Channel	4.5 mOhm	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	2 V	17 nC
Infineon Technologies BSZ0910NDXTMA1	PG-WISON-8		Surface Mount		9.5 A 25 A		800 pF	8-PowerVDFN			MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	2 V		2 N-Channel (Dual)	5.6 nC	9.5 mOhm	4.5V Drive Logic Level Gate	1.9 W 31 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.68
		10	$ 0.43
		100	$ 0.28
		500	$ 0.21
		1000	$ 0.19
		2000	$ 0.19
	Digi-Reel®	1	$ 0.68
		10	$ 0.43
		100	$ 0.28
		500	$ 0.21
		1000	$ 0.19
		2000	$ 0.19
	Tape & Reel (TR)	5000	$ 0.19
Newark	Each (Supplied on Cut Tape)	1	$ 0.81
		10	$ 0.51
		25	$ 0.46
		50	$ 0.40
		100	$ 0.35
		250	$ 0.31
		500	$ 0.28
		1000	$ 0.23

Description

General part information

BSZ0910 Series

Infineon’sOptiMOS™ PD power MOSFETportfolio is targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages. Click here to viewfull portfolio.