BSZ0910NDXTMA1

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 9.5A WISON-8

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Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 9.5A WISON-8

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ0910NDXTMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9.5 A, 25 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs [Max]	5.6 nC
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	31 W, 1.9 W
Rds On (Max) @ Id, Vgs [Max]	9.5 mOhm
Supplier Device Package	PG-WISON-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	FET Feature	Power - Max
Infineon Technologies BSZ0910LSATMA1	PG-TDSON-8 FL	20 V	Surface Mount	2.1 W 37 W	18 A 40 A	4.5 V 10 V	1100 pF	8-PowerTDFN	N-Channel	4.5 mOhm	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	2 V	17 nC
Infineon Technologies BSZ0910NDXTMA1	PG-WISON-8		Surface Mount		9.5 A 25 A		800 pF	8-PowerVDFN			MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	2 V		2 N-Channel (Dual)	5.6 nC	9.5 mOhm	4.5V Drive Logic Level Gate	1.9 W 31 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 9.5A (Ta), 25A (Tc) 1.9W (Ta), 31W (Tc) Surface Mount PG-WISON-8

Technical documentation and resources