BSZ0910 Series

Catalog

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 4.5 MOHM;

Part	Supplier Device Package	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	FET Feature	Power - Max
Infineon Technologies BSZ0910LSATMA1	PG-TDSON-8 FL	20 V	Surface Mount	2.1 W 37 W	18 A 40 A	4.5 V 10 V	1100 pF	8-PowerTDFN	N-Channel	4.5 mOhm	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	2 V	17 nC
Infineon Technologies BSZ0910NDXTMA1	PG-WISON-8		Surface Mount		9.5 A 25 A		800 pF	8-PowerVDFN			MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	2 V		2 N-Channel (Dual)	5.6 nC	9.5 mOhm	4.5V Drive Logic Level Gate	1.9 W 31 W