EPC2102ENGRT

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EPC

GANFET 2N-CH 60V 23A DIE

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EPC2102ENGRT

Unknown

EPC

GANFET 2N-CH 60V 23A DIE

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Specifications Pricing Series Description Documents

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Description

General part information

EPC210 Series

Mosfet Array 60V 23A (Tj) Surface Mount Die

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Datasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	EPC2102ENGRT	EPC210 Series

Configuration	2 N-Channel (Half Bridge)	2 N-Channel (Half Bridge), 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Current - Continuous Drain (Id) @ 25°C	23 A	1.7 - 500 A
Current - Continuous Drain (Id) @ 25°C	-	38 A
Current - Continuous Drain (Id) @ 25°C	-	9.5 A
Drain to Source Voltage (Vdss)	60 V	30 - 100 V
Gate Charge (Qg) (Max) @ Vgs	-	0.16 - 7 nC
Gate Charge (Qg) (Max) @ Vgs	-	0.044 - 19 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC	2.5 - 6.8 nC
Input Capacitance (Ciss) (Max) @ Vds	830 pF	7 - 7600 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-40 °C	-40 °C
Package / Case	Die	Die, 9-VFBGA
Rds On (Max) @ Id, Vgs	4.4 mOhm	2.1 - 320 mOhm
Supplier Device Package	Die	Die, 9-BGA (1.35x1.35)
Technology	GaNFET (Gallium Nitride)	GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id	2.5 V	2.5 V

EPC210 Series

GANFET 2N-CH 60V 23A DIE

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]
EPC EPC2102ENGRT	GaNFET (Gallium Nitride)	23 A	6.8 nC	4.4 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	830 pF	60 V
EPC EPC2104ENGRT	GaNFET (Gallium Nitride)	23 A		6.3 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	800 pF	100 V	7 nC
EPC EPC2105ENGRT	GaNFET (Gallium Nitride)	9.5 A	2.5 nC	14.5 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	300 pF	80 V
EPC EPC2106ENGRT	GaNFET (Gallium Nitride)	1.7 A		70 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	75 pF	100 V	0.73 nC
EPC EPC2103	GaNFET (Gallium Nitride)	28 A		5.5 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	760 pF	80 V	6.5 nC
EPC EPC2104	GaNFET (Gallium Nitride)	23 A		6.3 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	800 pF	100 V	7 nC
EPC EPC2100ENGRT	GaNFET (Gallium Nitride)	10 A, 40 A		2.1 mOhm, 8.2 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V, 2.5 V	Surface Mount	475 pF, 1960 pF	30 V	4.9 nC	19 nC
EPC EPC2105	GaNFET (Gallium Nitride)			3.4 mOhm, 14.5 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V, 2.5 V	Surface Mount	300 pF, 1100 pF	80 V	2.5 nC	10 nC	38 A	9.5 A
EPC EPC2106	GaNFET (Gallium Nitride)	1.7 A		70 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	75 pF	100 V	0.73 nC
EPC EPC2107	GaNFET (Gallium Nitride)	1.7 A, 500 mA		3.3 Ohm, 320 mOhm	9-BGA (1.35x1.35)	9-VFBGA	3 N-Channel (Half Bridge + Synchronous Bootstrap)	150 °C	-40 °C	2.5 V, 2.5 V	Surface Mount	7 pF, 16 pF	100 V	0.16 nC	0.044 nC