EPC2106

Active

EPC

MOSFET 2N-CH 100V 1.7A DIE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

EPC2106

Active

EPC

MOSFET 2N-CH 100V 1.7A DIE

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.66
		10	$ 1.71
		100	$ 1.18
		500	$ 0.95
	Digi-Reel®	1	$ 2.66
		10	$ 1.71
		100	$ 1.18
		500	$ 0.95
	Tape & Reel (TR)	2500	$ 0.79
		5000	$ 0.78

Description

General part information

EPC210 Series

Mosfet Array 100V 1.7A Surface Mount Die

Documents

Technical documentation and resources

Datasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	EPC2106	EPC210 Series

Configuration	2 N-Channel (Half Bridge)	2 N-Channel (Half Bridge), 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Current - Continuous Drain (Id) @ 25°C	1.7 A	1.7 - 500 A
Current - Continuous Drain (Id) @ 25°C	-	38 A
Current - Continuous Drain (Id) @ 25°C	-	9.5 A
Drain to Source Voltage (Vdss)	100 V	30 - 100 V
Gate Charge (Qg) (Max) @ Vgs	0.73 nC	0.16 - 7 nC
Gate Charge (Qg) (Max) @ Vgs	-	2.5 - 6.8 nC
Gate Charge (Qg) (Max) @ Vgs	-	0.044 - 19 nC
Input Capacitance (Ciss) (Max) @ Vds	75 pF	7 - 7600 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-40 °C	-40 °C
Package / Case	Die	Die, 9-VFBGA
Rds On (Max) @ Id, Vgs	70 mOhm	2.1 - 320 mOhm
Supplier Device Package	Die	Die, 9-BGA (1.35x1.35)
Technology	GaNFET (Gallium Nitride)	GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id	2.5 V	2.5 V

EPC210 Series

GANFET 2N-CH 60V 23A DIE

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]
EPC EPC2102ENGRT	GaNFET (Gallium Nitride)	23 A	6.8 nC	4.4 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	830 pF	60 V
EPC EPC2104ENGRT	GaNFET (Gallium Nitride)	23 A		6.3 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	800 pF	100 V	7 nC
EPC EPC2105ENGRT	GaNFET (Gallium Nitride)	9.5 A	2.5 nC	14.5 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	300 pF	80 V
EPC EPC2106ENGRT	GaNFET (Gallium Nitride)	1.7 A		70 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	75 pF	100 V	0.73 nC
EPC EPC2103	GaNFET (Gallium Nitride)	28 A		5.5 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	760 pF	80 V	6.5 nC
EPC EPC2104	GaNFET (Gallium Nitride)	23 A		6.3 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	800 pF	100 V	7 nC
EPC EPC2100ENGRT	GaNFET (Gallium Nitride)	10 A, 40 A		2.1 mOhm, 8.2 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V, 2.5 V	Surface Mount	475 pF, 1960 pF	30 V	4.9 nC	19 nC
EPC EPC2105	GaNFET (Gallium Nitride)			3.4 mOhm, 14.5 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V, 2.5 V	Surface Mount	300 pF, 1100 pF	80 V	2.5 nC	10 nC	38 A	9.5 A
EPC EPC2106	GaNFET (Gallium Nitride)	1.7 A		70 mOhm	Die	Die	2 N-Channel (Half Bridge)	150 °C	-40 °C	2.5 V	Surface Mount	75 pF	100 V	0.73 nC
EPC EPC2107	GaNFET (Gallium Nitride)	1.7 A, 500 mA		3.3 Ohm, 320 mOhm	9-BGA (1.35x1.35)	9-VFBGA	3 N-Channel (Half Bridge + Synchronous Bootstrap)	150 °C	-40 °C	2.5 V, 2.5 V	Surface Mount	7 pF, 16 pF	100 V	0.16 nC	0.044 nC