GANFET 2N-CH 60V 23A DIE
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Configuration | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C [Max] | Current - Continuous Drain (Id) @ 25°C [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPC EPC2102ENGRT | GaNFET (Gallium Nitride) | 23 A | 6.8 nC | 4.4 mOhm | Die | Die | 2 N-Channel (Half Bridge) | 150 °C | -40 °C | 2.5 V | Surface Mount | 830 pF | 60 V | ||||
EPC EPC2104ENGRT | GaNFET (Gallium Nitride) | 23 A | 6.3 mOhm | Die | Die | 2 N-Channel (Half Bridge) | 150 °C | -40 °C | 2.5 V | Surface Mount | 800 pF | 100 V | 7 nC | ||||
EPC EPC2106ENGRT | GaNFET (Gallium Nitride) | 1.7 A | 70 mOhm | Die | Die | 2 N-Channel (Half Bridge) | 150 °C | -40 °C | 2.5 V | Surface Mount | 75 pF | 100 V | 0.73 nC | ||||
EPC EPC2104 | GaNFET (Gallium Nitride) | 23 A | 6.3 mOhm | Die | Die | 2 N-Channel (Half Bridge) | 150 °C | -40 °C | 2.5 V | Surface Mount | 800 pF | 100 V | 7 nC | ||||
EPC EPC2100ENGRT | GaNFET (Gallium Nitride) | 10 A, 40 A | 2.1 mOhm, 8.2 mOhm | Die | Die | 2 N-Channel (Half Bridge) | 150 °C | -40 °C | 2.5 V, 2.5 V | Surface Mount | 475 pF, 1960 pF | 30 V | 4.9 nC | 19 nC | |||
EPC EPC2105 | GaNFET (Gallium Nitride) | 3.4 mOhm, 14.5 mOhm | Die | Die | 2 N-Channel (Half Bridge) | 150 °C | -40 °C | 2.5 V, 2.5 V | Surface Mount | 300 pF, 1100 pF | 80 V | 2.5 nC | 10 nC | 38 A | 9.5 A | ||
EPC EPC2106 | GaNFET (Gallium Nitride) | 1.7 A | 70 mOhm | Die | Die | 2 N-Channel (Half Bridge) | 150 °C | -40 °C | 2.5 V | Surface Mount | 75 pF | 100 V | 0.73 nC | ||||
EPC EPC2107 | GaNFET (Gallium Nitride) | 1.7 A, 500 mA | 3.3 Ohm, 320 mOhm | 9-BGA (1.35x1.35) | 9-VFBGA | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | 150 °C | -40 °C | 2.5 V, 2.5 V | Surface Mount | 7 pF, 16 pF | 100 V | 0.16 nC | 0.044 nC | |||
EPC EPC2101 | GaNFET (Gallium Nitride) | 2.7 mOhm, 11.5 mOhm | Die | Die | 2 N-Channel (Half Bridge) | 150 °C | -40 °C | 2.5 V, 2.5 V | Surface Mount | 300 pF, 1200 pF | 60 V | 2.7 nC | 12 nC | 38 A | 9.5 A | ||
EPC EPC2103ENGRT | GaNFET (Gallium Nitride) | 23 A | 5.5 mOhm | Die | Die | 2 N-Channel (Half Bridge) | 2.5 V | Surface Mount | 7600 pF | 80 V | 6.5 nC |