IPZA60R024P7XKSA1

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Infineon Technologies

MOSFET N-CH 600V 101A TO247-4-3

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LTB

Infineon Technologies

MOSFET N-CH 600V 101A TO247-4-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPZA60R024P7XKSA1

Current - Continuous Drain (Id) @ 25°C	101 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	164 nC
Input Capacitance (Ciss) (Max) @ Vds	7144 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	291 W
Supplier Device Package	PG-TO247-4-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPZA60R024P7XKSA1	164 nC	N-Channel	600 V	10 V	7144 pF	-55 °C	150 °C	4 V	20 V	TO-247-4	101 A	Through Hole	PG-TO247-4-3	MOSFET (Metal Oxide)	291 W
Infineon Technologies IPZA60R120P7XKSA1		N-Channel	600 V	10 V		-55 °C	150 °C	4 V	20 V	TO-247-4	26 A	Through Hole	PG-TO247-4	MOSFET (Metal Oxide)	95 W	1544 pF	120 mOhm	36 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 101A (Tc) 291W (Tc) Through Hole PG-TO247-4-3

Technical documentation and resources