IPZA60 Series

Catalog

MOSFET N-CH 600V 101A TO247-4-3

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPZA60R024P7XKSA1	164 nC	N-Channel	600 V	10 V	7144 pF	-55 °C	150 °C	4 V	20 V	TO-247-4	101 A	Through Hole	PG-TO247-4-3	MOSFET (Metal Oxide)	291 W
Infineon Technologies IPZA60R120P7XKSA1		N-Channel	600 V	10 V		-55 °C	150 °C	4 V	20 V	TO-247-4	26 A	Through Hole	PG-TO247-4	MOSFET (Metal Oxide)	95 W	1544 pF	120 mOhm	36 nC