Specification	SSM3K72KCT,L3F

Current - Continuous Drain (Id) (Ta)	400 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	0.6 nC
Input Capacitance (Ciss) (Max)	40 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-101, SOT-883
Package Name	CST3
Power Dissipation (Max)	500 mW
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.1 V

SSM3K36 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-323F(UFM)

Part	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Rds On (Max)	Operating Temperature	FET Type	Vgs(th) (Max)	Package Name	Technology	Mounting Type	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Toshiba Semiconductor and Storage SSM3K36TU,LF	500 mA	10 V	3-SMD Flat Leads	20 V	1.23 nC	630 mOhm	150 °C	N-Channel	1 V	UFM	MOSFET (Metal Oxide)	Surface Mount	46 pF	5 V	1.5 V	800 mW
Toshiba Semiconductor and Storage SSM3K36FS,LF	500 mA	10 V	SC-75 SOT-416	20 V	1.23 nC	630 mOhm	150 °C	N-Channel	1 V	SSM	MOSFET (Metal Oxide)	Surface Mount	46 pF	5 V	1.5 V	150 mW
Toshiba Semiconductor and Storage SSM3K72KCT,L3F	400 mA	20 V	SC-101 SOT-883	60 V	0.6 nC	1.5 Ohm		N-Channel	2.1 V	CST3	MOSFET (Metal Oxide)	Surface Mount	40 pF	10 V	4.5 V	500 mW	-55 °C	150 °C
Toshiba Semiconductor and Storage SSM3K36MFV,L3F	500 mA	10 V	SOT-723	20 V	1.23 nC	630 mOhm	150 °C	N-Channel	1 V	VESM	MOSFET (Metal Oxide)	Surface Mount	46 pF	5 V	1.5 V	150 mW

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