MOSFET N-CH 20V 500MA UFM
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Operating Temperature | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1.23 nC | 1 V | N-Channel | 10 V | 1.5 V 5 V | 630 mOhm | 150 °C | UFM | MOSFET (Metal Oxide) | 46 pF | 500 mA | 20 V | Surface Mount | ||
Toshiba Semiconductor and Storage | 1.23 nC | 1 V | N-Channel | 10 V | 1.5 V 5 V | 630 mOhm | 150 °C | SSM | MOSFET (Metal Oxide) | 46 pF | 500 mA | 20 V | Surface Mount | 150 mW | SC-75 SOT-416 |
Toshiba Semiconductor and Storage | 1.23 nC | 1 V | N-Channel | 10 V | 1.5 V 5 V | 630 mOhm | 150 °C | VESM | MOSFET (Metal Oxide) | 46 pF | 500 mA | 20 V | Surface Mount | 150 mW | SOT-723 |