SSM3K36MFV,L3F

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA VESM

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA VESM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K36MFV,L3F

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.23 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	630 mOhm
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max) [Max]	Package / Case
Toshiba Semiconductor and Storage SSM3K36TU,LF	1.23 nC	1 V	N-Channel	10 V	1.5 V 5 V	630 mOhm	150 °C	UFM	MOSFET (Metal Oxide)	46 pF	500 mA	20 V	Surface Mount
Toshiba Semiconductor and Storage SSM3K36FS,LF	1.23 nC	1 V	N-Channel	10 V	1.5 V 5 V	630 mOhm	150 °C	SSM	MOSFET (Metal Oxide)	46 pF	500 mA	20 V	Surface Mount	150 mW	SC-75 SOT-416
Toshiba Semiconductor and Storage SSM3K36MFV,L3F	1.23 nC	1 V	N-Channel	10 V	1.5 V 5 V	630 mOhm	150 °C	VESM	MOSFET (Metal Oxide)	46 pF	500 mA	20 V	Surface Mount	150 mW	SOT-723

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 500mA (Ta) 150mW (Ta) Surface Mount VESM

Technical documentation and resources