STW20NM50FD

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 500 V, 250 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

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STW20NM50FD

Active

STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 500 V, 250 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW20NM50FD	STW20 Series

Current - Continuous Drain (Id) @ 25°C	20 A	17 - 20 A
Drain to Source Voltage (Vdss)	500 V	500 - 600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC	53 - 119 nC
Input Capacitance (Ciss) (Max) @ Vds	1380 pF	1300 - 2600 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Operating Temperature	-	150 °C
Operating Temperature	-	-65 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	214 W	192 - 214 W
Power Dissipation (Max)	-	190 W
Rds On (Max) @ Id, Vgs	-	270 - 290 mOhm
Rds On (Max) @ Id, Vgs [Max]	250 mOhm	250 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V
Vgs(th) (Max) @ Id	5 V	4.5 - 5 V

STW20 Series

N-Channel 600V - 0.25Ohm - 20A TO-247 MDmesh™ POWER MOSFET

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STW20NM60	Through Hole	20 A	N-Channel	192 W	TO-247-3	290 mOhm	54 nC	TO-247-3	1500 pF	600 V	MOSFET (Metal Oxide)	30 V	150 °C	5 V	10 V
STMicroelectronics STW20NM60FD	Through Hole	20 A	N-Channel	214 W	TO-247-3	290 mOhm		TO-247-3	1300 pF	600 V	MOSFET (Metal Oxide)	30 V		5 V	10 V	150 °C	-65 °C
STMicroelectronics STW20NK50Z	Through Hole	17 A	N-Channel		TO-247-3	270 mOhm	119 nC	TO-247-3	2600 pF	500 V	MOSFET (Metal Oxide)	30 V	150 °C	4.5 V	10 V			190 W
STMicroelectronics STW20NM50FD	Through Hole	20 A	N-Channel	214 W	TO-247-3		53 nC	TO-247-3	1380 pF	500 V	MOSFET (Metal Oxide)	30 V	150 °C	5 V	10 V				250 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 6.80
		10	$ 6.71
		25	$ 4.45
		100	$ 4.15
		250	$ 3.84
Digikey	Tube	1	$ 7.66
		30	$ 6.12
		120	$ 5.47
		510	$ 4.83
		1020	$ 4.35
		2010	$ 4.07
Newark	Each	1	$ 7.81
		10	$ 6.73
		25	$ 5.87
		50	$ 5.45
		100	$ 4.75
		250	$ 4.05

Description

General part information

STW20 Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.