TPS1120D
ActiveDUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET
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TPS1120D
ActiveDUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | TPS1120D |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 1.17 A |
| Drain to Source Voltage (Vdss) | 15 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 5.45 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 3.9 mm |
| Package / Case | 8-SOIC |
| Power - Max | 840 mW |
| Rds On (Max) @ Id, Vgs [Max] | 180 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
TPS1120 Series
Dual P-channel Enhancemenent-Mode MOSFET
| Part | Power - Max | Supplier Device Package | FET Feature | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Technology | Configuration | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments TPS1120DThe TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTMprocess, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTMprocess, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits. | 840 mW | 8-SOIC | Logic Level Gate | 1.17 A | 3.9 mm | 8-SOIC | 180 mOhm | 5.45 nC | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 150 C | -40 °C | 15 V | 1.5 V | Surface Mount |
Description
General part information
TPS1120 Series
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTMprocess, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.
Documents
Technical documentation and resources