Catalog(1 parts)
| Part | Power - Max▲▼ | Supplier Device Package | FET Feature | Current - Continuous Drain (Id) @ 25°C▲▼ | Package / Case▲▼ | Package / Case | Rds On (Max) @ Id, Vgs▲▼ | Gate Charge (Qg) (Max) @ Vgs▲▼ | Technology | Configuration | Operating Temperature▲▼ | Operating Temperature▲▼ | Drain to Source Voltage (Vdss)▲▼ | Vgs(th) (Max) @ Id▲▼ | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0.8399999737739563 W | 8-SOIC | Logic Level Gate | 1.1699999570846558 A | 0.003899999894201755 m | 8-SOIC | 0.18000000715255737 Ω | 5.450000006845812e-9 C | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 150 °C | -40 °C | 15 V | 1.5 V | Surface Mount |
Key Features
• Low rDS(on). . . 0.18at VGS= -10 V3-V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th)= -1.5 V MaxESD Protection Up to 2 kV per MIL-STD-883C, Method 3015LinBICMOS is a trademark of Texas Instruments IncorporatedLow rDS(on). . . 0.18at VGS= -10 V3-V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th)= -1.5 V MaxESD Protection Up to 2 kV per MIL-STD-883C, Method 3015LinBICMOS is a trademark of Texas Instruments Incorporated
Description
AI
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTMprocess, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTMprocess, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.