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CSD18542KTT - https://ti.com/content/dam/ticom/images/products/package/k/ktt0002a.png

CSD18542KTT

Active
Texas Instruments

60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 4 MOHM 2-DDPAK/TO-263 -55 TO 175

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Search across all available documentation for this part.

DocumentsDatasheetCSD18542KTT 60V N-Channel NexFET™ Power MOSFET datasheet (Rev. B)+5
CSD18542KTT - https://ti.com/content/dam/ticom/images/products/package/k/ktt0002a.png

CSD18542KTT

Active
Texas Instruments

60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 4 MOHM 2-DDPAK/TO-263 -55 TO 175

Deep-Dive with AI

DocumentsDatasheetCSD18542KTT 60V N-Channel NexFET™ Power MOSFET datasheet (Rev. B)+5

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationCSD18542KTTCSD18542 Series
Current - Continuous Drain (Id) @ 25°C200 A200 A
Drain to Source Voltage (Vdss)60 V60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V4.5 - 10 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs57 nC57 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]5070 pF5070 pF
Mounting TypeSurface MountSurface Mount
Operating Temperature [Max]175 ░C175 ░C
Operating Temperature [Min]-55 °C-55 °C
Package / CaseTO-263-4, D2PAK (3 Leads + Tab), TO-263AATO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Power Dissipation (Max) [Max]250 W250 W
Rds On (Max) @ Id, Vgs4 mOhm4 mOhm
Supplier Device PackageTO-263 (DDPAK-3)TO-263 (DDPAK-3)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max) [Max]20 V20 V
Vgs (Max) [Min]-20 V-20 V
Vgs(th) (Max) @ Id [Max]2.2 V2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Chip One StopN/A 1$ 1.68
DigiKeyN/A 1$ 3.23
10$ 2.10
100$ 1.46
500$ 1.09
1000$ 1.02
1500$ 1.02
DigikeyCut Tape (CT) 1$ 2.45
10$ 2.04
100$ 1.62
Digi-Reel® 1$ 2.45
10$ 2.04
100$ 1.62
Tape & Reel (TR) 500$ 1.37
1000$ 1.16
2500$ 1.11
5000$ 1.06
LCSCN/A 1$ 1.42
10$ 1.26
30$ 1.15
100$ 1.04
500$ 1.00
1000$ 0.98
Mouser ElectronicsN/A 1$ 2.64
10$ 1.85
100$ 1.34
500$ 1.10
1000$ 1.02
2500$ 1.01
5000$ 1.00
New Advantage CorporationN/A 100$ 2.60
478$ 2.43
TMEN/A 1$ 2.33
5$ 2.10
25$ 1.85
100$ 1.66
500$ 1.55
Texas InstrumentsLARGE T&R 1$ 1.67
100$ 1.38
250$ 0.99
1000$ 0.74
Win Source ElectronicsN/A 50$ 1.09
100$ 1.02
155$ 0.99
220$ 0.92
285$ 0.88
355$ 0.85

CSD18542 Series

60-V, N channel NexFET™ power MOSFET, single D2PAK, 4 mOhm

PartPackage / CaseSupplier Device PackageVgs(th) (Max) @ Id [Max]Gate Charge (Qg) (Max) @ VgsFET TypePower Dissipation (Max) [Max]TechnologyRds On (Max) @ Id, VgsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Operating Temperature [Min]Operating Temperature [Max]Drive Voltage (Max Rds On, Min Rds On)Mounting TypeVgs (Max) [Min]Vgs (Max) [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]
Texas Instruments
CSD18542KTT
D2PAK (3 Leads + Tab), TO-263-4, TO-263AA
TO-263 (DDPAK-3)
2.2 V
57 nC
N-Channel
250 W
MOSFET (Metal Oxide)
4 mOhm
200 A
60 V
-55 °C
175 ░C
4.5 V, 10 V
Surface Mount
-20 V
20 V
5070 pF
Texas Instruments
CSD18542KTTT
D2PAK (3 Leads + Tab), TO-263-4, TO-263AA
TO-263 (DDPAK-3)
2.2 V
57 nC
N-Channel
250 W
MOSFET (Metal Oxide)
4 mOhm
60 V
-55 °C
175 ░C
4.5 V, 10 V
Surface Mount
-20 V
20 V
5070 pF

Description

General part information

CSD18542 Series

This 60V, 3.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 60V, 3.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.