CSD18542 Series

60-V, N channel NexFET™ power MOSFET, single D2PAK, 4 mOhm

Link to Manufacturer Page: https://www.ti.com/

Catalog

60-V, N channel NexFET™ power MOSFET, single D2PAK, 4 mOhm

Part	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max) [Max]	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Texas Instruments CSD18542KTT	D2PAK (3 Leads + Tab), TO-263-4, TO-263AA	TO-263 (DDPAK-3)	2.2 V	57 nC	N-Channel	250 W	MOSFET (Metal Oxide)	4 mOhm	200 A	60 V	-55 °C	175 ░C	4.5 V, 10 V	Surface Mount	-20 V	20 V	5070 pF
Texas Instruments CSD18542KTTT	D2PAK (3 Leads + Tab), TO-263-4, TO-263AA	TO-263 (DDPAK-3)	2.2 V	57 nC	N-Channel	250 W	MOSFET (Metal Oxide)	4 mOhm		60 V	-55 °C	175 ░C	4.5 V, 10 V	Surface Mount	-20 V	20 V	5070 pF

Key Features

• Ultra-low Qg and QgdLow-thermal resistanceAvalanche ratedLogic levelLead-free terminal platingRoHS compliantHalogen freeD2PAK plastic packageUltra-low Qg and QgdLow-thermal resistanceAvalanche ratedLogic levelLead-free terminal platingRoHS compliantHalogen freeD2PAK plastic package

Description

This 60V, 3.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 60V, 3.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.