RN1708,LF

Active

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER47KOH

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER47KOH

Technical Specifications

Parameters and characteristics for this part

Specification	RN1708,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-70-5, 5-TSSOP, SOT-353
Power - Max [Max]	200 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	USV
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Mounting Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Resistor - Emitter Base (R2)
Toshiba Semiconductor and Storage RN1708JE(TE85L,F)	80	2 NPN - Pre-Biased (Dual) (Emitter Coupled)	ESV	50 V	250 MHz	500 nA	Surface Mount	SOT-553	300 mV	22 kOhms	100 mW	100 mA	47000 Ohms
Toshiba Semiconductor and Storage RN1708,LF	80	2 NPN - Pre-Biased (Dual)	USV	50 V	250 MHz	500 nA	Surface Mount	5-TSSOP SC-70-5 SOT-353	300 mV	22 kOhms	200 mW	100 mA	47000 Ohms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount USV

Technical documentation and resources