Specification	RN1708JE(TE85L,F)

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
NPN Count	2
Package / Case	SOT-553
Package Name	ESV
Power - Max	100 mW
Resistor - Base (R1) Resistance	22 kOhm
Resistor - Emitter Base (R2)	47 kOhm
Transistor Configuration	Emitter Coupled, Pre-Biased, Dual
Transistor Type	NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN1708 Series

Part	Transistor Configuration	Transistor Type	NPN Count	Mounting Type	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max)	Power - Max	Frequency - Transition	Resistor - Base (R1) Resistance	Resistor - Emitter Base (R2)	Package / Case	DC Current Gain (hFE) (Min)	Package Name	Vce Saturation (Max)	Voltage - Collector Emitter Breakdown (Max)
Toshiba Semiconductor and Storage RN1708JE(TE85L,F)	Dual Emitter Coupled Pre-Biased	NPN	2	Surface Mount	500 nA	0.1 mA	100 mW	250 MHz	22 kOhm	47 kOhm	SOT-553	80	ESV	300 mV	50 V
Toshiba Semiconductor and Storage RN1708,LF	Dual Pre-Biased	NPN	2	Surface Mount	500 nA	0.1 mA	200 mW	250 MHz	22 kOhm	47 kOhm	5-TSSOP SC-70-5 SOT-353	80	USV	300 mV	50 V

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