RN1708JE(TE85L,F)

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Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=22KOHM Q1BER=4

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Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=22KOHM Q1BER=4

Technical Specifications

Parameters and characteristics for this part

Specification	RN1708JE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-553
Power - Max [Max]	100 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	ESV
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Mounting Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Resistor - Emitter Base (R2)
Toshiba Semiconductor and Storage RN1708JE(TE85L,F)	80	2 NPN - Pre-Biased (Dual) (Emitter Coupled)	ESV	50 V	250 MHz	500 nA	Surface Mount	SOT-553	300 mV	22 kOhms	100 mW	100 mA	47000 Ohms
Toshiba Semiconductor and Storage RN1708,LF	80	2 NPN - Pre-Biased (Dual)	USV	50 V	250 MHz	500 nA	Surface Mount	5-TSSOP SC-70-5 SOT-353	300 mV	22 kOhms	200 mW	100 mA	47000 Ohms

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General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV

Technical documentation and resources