Beta
⌘K
NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | Current - Collector Cutoff (Max) [Max] | Mounting Type | Package / Case | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 80 | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 50 V | 250 MHz | 500 nA | Surface Mount | SOT-553 | 300 mV | 22 kOhms | 100 mW | 100 mA | 47000 Ohms |
Toshiba Semiconductor and Storage | 80 | 2 NPN - Pre-Biased (Dual) | USV | 50 V | 250 MHz | 500 nA | Surface Mount | 5-TSSOP SC-70-5 SOT-353 | 300 mV | 22 kOhms | 200 mW | 100 mA | 47000 Ohms |