RN1708 Series
Manufacturer: Toshiba Semiconductor and Storage
NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
| Part | Transistor Configuration | Transistor Type | NPN Count | Mounting Type | Current - Collector Cutoff (Max) | Current - Collector (Ic) (Max) | Power - Max | Frequency - Transition | Resistor - Base (R1) Resistance | Resistor - Emitter Base (R2) | Package / Case | DC Current Gain (hFE) (Min) | Package Name | Vce Saturation (Max) | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Dual Emitter Coupled Pre-Biased | NPN | 2 | Surface Mount | 500 nA | 0.1 mA | 100 mW | 250 MHz | 22 kOhm | 47 kOhm | SOT-553 | 80 | ESV | 300 mV | 50 V |
Toshiba Semiconductor and Storage | Dual Pre-Biased | NPN | 2 | Surface Mount | 500 nA | 0.1 mA | 200 mW | 250 MHz | 22 kOhm | 47 kOhm | 5-TSSOP SC-70-5 SOT-353 | 80 | USV | 300 mV | 50 V |