STW20NM60FD
ActiveMOSFET TRANSISTOR, N CHANNEL, 20 A, 600 V, 0.26 OHM, 10 V, 4 V ROHS COMPLIANT: YES
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STW20NM60FD
ActiveMOSFET TRANSISTOR, N CHANNEL, 20 A, 600 V, 0.26 OHM, 10 V, 4 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STW20NM60FD | STW20 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A | 17 - 20 A |
| Drain to Source Voltage (Vdss) | 600 V | 500 - 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V | 10 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | - | 53 - 119 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF | 1300 - 2600 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | - | 150 °C |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -65 °C | -65 °C |
| Package / Case | TO-247-3 | TO-247-3 |
| Power Dissipation (Max) | 214 W | 192 - 214 W |
| Power Dissipation (Max) | - | 190 W |
| Rds On (Max) @ Id, Vgs | 290 mOhm | 270 - 290 mOhm |
| Rds On (Max) @ Id, Vgs | - | 250 mOhm |
| Supplier Device Package | TO-247-3 | TO-247-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V | 30 V |
| Vgs(th) (Max) @ Id | 5 V | 4.5 - 5 V |
STW20 Series
N-Channel 600V - 0.25Ohm - 20A TO-247 MDmesh™ POWER MOSFET
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | FET Type | Power Dissipation (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Technology | Vgs (Max) | Operating Temperature | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STW20NM60 | Through Hole | 20 A | N-Channel | 192 W | TO-247-3 | 290 mOhm | 54 nC | TO-247-3 | 1500 pF | 600 V | MOSFET (Metal Oxide) | 30 V | 150 °C | 5 V | 10 V | ||||
STMicroelectronics STW20NM60FD | Through Hole | 20 A | N-Channel | 214 W | TO-247-3 | 290 mOhm | TO-247-3 | 1300 pF | 600 V | MOSFET (Metal Oxide) | 30 V | 5 V | 10 V | 150 °C | -65 °C | ||||
STMicroelectronics STW20NK50Z | Through Hole | 17 A | N-Channel | TO-247-3 | 270 mOhm | 119 nC | TO-247-3 | 2600 pF | 500 V | MOSFET (Metal Oxide) | 30 V | 150 °C | 4.5 V | 10 V | 190 W | ||||
STMicroelectronics STW20NM50FD | Through Hole | 20 A | N-Channel | 214 W | TO-247-3 | 53 nC | TO-247-3 | 1380 pF | 500 V | MOSFET (Metal Oxide) | 30 V | 150 °C | 5 V | 10 V | 250 mOhm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW20 Series
The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Documents
Technical documentation and resources