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STPSC12065G2-TR - TN4050HP-12G2YTR

STPSC12065G2-TR

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STMicroelectronics

650 V POWER SCHOTTKY SILICON CARBIDE DIODE

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DocumentsAN4242+11
STPSC12065G2-TR - TN4050HP-12G2YTR

STPSC12065G2-TR

Active
STMicroelectronics

650 V POWER SCHOTTKY SILICON CARBIDE DIODE

Deep-Dive with AI

DocumentsAN4242+11

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.86
10$ 3.24
100$ 2.62
500$ 2.33
Digi-Reel® 1$ 3.86
10$ 3.24
100$ 2.62
500$ 2.33
Tape & Reel (TR) 1000$ 2.00
2000$ 1.88
5000$ 1.80

Description

General part information

STPSC12065 Series

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.