STPSC12065D

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 36 NC, TO-220AC, 2 PINS

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DocumentsTechnical Data Sheet EN Product Change Notice EN +13

STPSC12065D

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 36 NC, TO-220AC, 2 PINS

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DocumentsTechnical Data Sheet EN Product Change Notice EN +13

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STPSC12065D	STPSC12065 Series

Capacitance @ Vr, F	750 pF	750 pF
Current - Average Rectified (Io)	12 A	12 A
Current - Reverse Leakage @ Vr	150 µA	50 - 150 µA
Grade	-	Automotive
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-40 °C	-40 °C
Package / Case	TO-220-2	TO-220-2, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	-	AEC-Q101
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-220AC	TO-220AC, D2PAK
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.45 V	1.45 V

STPSC12065 Series

650 V power Schottky silicon carbide diode

Part	Capacitance @ Vr, F	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Speed	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Grade
STMicroelectronics STPSC12065D	750 pF	12 A	SiC (Silicon Carbide) Schottky	1.45 V	150 µA	-40 °C	175 ░C	TO-220-2	No Recovery Time	TO-220AC	Through Hole	650 V
STMicroelectronics STPSC12065DY	750 pF	12 A	SiC (Silicon Carbide) Schottky	1.45 V	50 µA	-40 °C	175 ░C	TO-220-2	No Recovery Time	TO-220AC	Through Hole	650 V	AEC-Q101	Automotive
STMicroelectronics STPSC12065G2-TR	750 pF	12 A	SiC (Silicon Carbide) Schottky	1.45 V	150 µA	-40 °C	175 ░C	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	No Recovery Time	D2PAK	Surface Mount	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.50
		10	$ 1.91
		100	$ 1.68
		500	$ 1.57
		1000	$ 1.52
		2000	$ 1.51
Digikey	Tube	1	$ 2.43
		10	$ 2.04
		100	$ 1.65
		500	$ 1.61
Newark	Each	1	$ 4.40
		10	$ 3.18
		25	$ 3.04
		50	$ 2.90
		100	$ 2.76
		250	$ 2.67
		500	$ 2.57

Description

General part information

STPSC12065 Series

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

Documents

Technical documentation and resources

STPSC12065D

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STPSC12065D

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Technical Specifications

STPSC12065 Series

Pricing

Description

STPSC12065 Series

Documents

Technical Data Sheet EN

Product Change Notice EN

Datasheet

AN5088

AN4242

DS11623

Technical Specifications

STPSC12065 Series